摘要
根据通常负电子亲和势二次电子发射材料砷化镓的能级特点,提出延长负电子亲和势二次电子发射材料砷化镓的逸出深度的理论设计,设计出了特殊的负电子亲和势二次电子发射材料砷化镓.通过对两种负电子亲和势二次电子发射材料的二次电子发射系数的理论值进行比较和分析,得出:当原电子入射能量较低时,两种材料的二次电子发射系数差值较小;当原电子入射能量较高时,两种材料的二次电子发射系数差值较大,而且随着原电子入射能量的升高,两种材料的二次电子发射系数差值也在增大.
Based on the energy band characteristics of ordinary negative electron affinity emitter GaAs, the design of lengthening the diffusion lengths of negative electron affinity emitter GaAs was presented, and the special negative electron affinity emitter GaAs was designed. Based on the comparison and analysis of the secondary electron emission coefficient of two kinds of emitter GaAs in theory, it is concluded that when primary electron energy is lower the deviation of secondary electron emission coefficient of two kinds of emitter GaAs will become smaller, while when primary electron energy is higher the deviation will increase.
基金
南京信息工程大学科研基金(QD65)资助
关键词
二次电子发射系数
砷化镓
负电子亲和势
逸出深度
secondary electron emission coefficient
GaAs
negative electron affinity
diffusion lengths
