期刊文献+

CMP加工过程中均匀去除率的研究 被引量:4

Symmetrical Wipe Rate Research of CMP System's Process
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摘要 半导体制造技术已经达到了亚微米技术水平,CMP(chemical mechanical planarization)化学机械抛光是IC制造工艺中进行全局平坦化唯一的途径,分析了针对大直径晶圆进行全局平坦化,达到面型精度和表面完整性的要求而采取的区域压力控制技术。 At present, semiconductor manufacture technology has attained a sub-micron level, and CMP (chemical mechanical planarization) is the only approach of processing whole plainness in IC manufacture technics. Aiming at big-diameter wafer processed whole plainness, the paper analyses field pressure control technology of CMP system for attaining surface shape precision and surface integrality requirement.
作者 种宝春
出处 《电子工业专用设备》 2007年第1期58-61,共4页 Equipment for Electronic Products Manufacturing
关键词 全局平坦化 化学机械抛光 抛光头 区域压力控制 Whole plainness CMP Carrier Field pressure control
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参考文献3

  • 1孙禹辉,康仁科,郭东明,金洙吉.CMP加工中的真空吸盘区域压力控制技术[J].电子工业专用设备,2004,33(7):34-39. 被引量:6
  • 2[美]夸克(Quirk.M)等著;韩郑生等译.半导体制造技术[M].北京:电子工业出版社,2004.
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二级参考文献10

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