摘要
近年来短波长紫外LED巨大的应用价值引起了人们的高度关注,成为了全球半导体领域研究和投资的新热点。本文综合分析了AlGaN材料的生长、碎裂、掺杂和欧姆接触等问题,对UV-LED的发展历程、技术路线和研究进展进行了详细介绍,并展望了未来发展方向。
In recent years UV - LEDs （ Ultra - Violet Light Emitting Diodes） attract great attention and become new focus in both scientific research and industrial investment for its wide application. In this paper, the current status of material growth, defects, cracking, doping and ohmic contact for AlGaN are reviewed. The development history, technology roadmap and current achievements of UV - LED are dis- cussed in detail. Finally, the application and trend of UV - LED in future are presented.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第1期95-100,共6页
Journal of Functional Materials and Devices
基金
国家863项目支持(No.2004AA311040)
