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沉积温度对ZnO薄膜结构及发光性能的影响 被引量:3

Effect of substrate temperature on structure and photoluminescence properties of ZnO thin films
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摘要 利用Nd-YAG激光器(波长为1064nm,频率为10Hz)做光源,采用纯金属锌靶,以Si(111)为基体在有氧的气氛中通过激光烧蚀锌靶表面来制备氧化锌薄膜,研究基体温度对ZnO薄膜结构及发光性能的影响。通过XRD和AFM原子力显微镜来表征氧化锌薄膜的结构和表面形貌,其光学性质由光致发光谱来表征。结果表明:在450-550℃的条件下沉积的ZnO薄膜具有c-轴择优取向,500℃时c-轴取向最明显。具有c-轴取向的ZnO薄膜具有强的紫外光发射和弱的绿光发射,发光中心在518nm处的黄绿光发射主要归因于电子从导带底部到氧位错缺陷OZn能级之间的跃迁。 ZnO thin fdms on Si (111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere. Nd-YAG laser with wavelength of 1064nm was used as laser source. The effect of suhstrate temperature on structure of ZnO thin films was investigated by means of XRD and AFM .The optical properties of the ZnO thin films were characterized by photolumineseence with an Ar ion laser as a light source. It is found that ZnO film with a majority of c-axis growth grains can be obtained under the condition of substrate temperature 450 - 550%. Corresponding to the c-axis growth structure, intense UV emission with narrow FWHM and weak green emission is obtained from the ZnO films grown at substrate temperature 500℃. The green deep level emission centering about 518nm can be attributed to the electron transitions from the bottom of the conduction band to the antisite oxygen Ozn defect levels.
出处 《材料热处理学报》 EI CAS CSCD 北大核心 2007年第1期1-4,共4页 Transactions of Materials and Heat Treatment
基金 国家"973"重点基础研究与发展规划项目(2004CB619-301)
关键词 ZNO 脉冲激光沉积 紫外光发射 X射线衍射 ZnO PLD UV photoluminescence X-ray diffraction
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  • 1Fu Zhuxi,J Cryst Growth,1998年,193卷,316页
  • 2Guo Changxin,发光学报,1998年,19卷,339页
  • 3Shi Chaoshu,J Electr Spec Related Phen,1990年,101卷,629页

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