摘要
本文分析了以正硅酸乙酯溶液为源，用等离子体增强化学汽相淀积法淀积的氧化硅膜的成分与电荷等特性，以及淀积和退火工艺条件对这些特性的影响。
The Composition and charge properities of PETEOS silicon dioxide films deposited with tetraethoxysilane (TEOS) as liquid source are analysed, also, the effects of deposition and annealing conditions on these properities are discussed.
出处
《华东师范大学学报（自然科学版）》
CAS
CSCD
1996年第3期59-62,共4页
Journal of East China Normal University(Natural Science)
关键词
介质膜
VLSI
氧化硅膜
PETEOS
化学汽相淀积
vary large scale integrated circuit dielectric film plasma enhanced chemical vapor deposition
