纳米ZnO基掺杂气敏元件阵列的制备与特性

Preparation and properties of doped nanometer ZnO gas sensor array

以金属蒸气氧化法制备的纯纳米ZnO为气敏原料，通过丝网印刷技术在Al2O3基片上制得纯ZnO和掺杂ZnO的气敏元件阵列。结果表明，元件阵列具有低的功耗，纯ZnO气敏元件阵列在350～400℃对橙汁、可乐、酒精和汽油有较高的敏感性，灵敏度分别为2．9，2．9，53．5和43.4。通过Bi2O3＋Cu2O的掺杂，可以降低纯ZnO的电导，并进一步提高气敏元件在250～350℃温度区间对汽油的敏感性。并对其气敏机理进行了探讨。

Pure ZnO nanoparticles were produced by metallic vapour oxidation method. Based on this raw material and it＇s dopant, gas sensor array was fabricated onto Al2O3 ceramic substrate through screen-printing technique. The results show that gas sensor array has low-power, the gas sensor array of pure ZnO exhibited higher sensitivity to orange juice, cola, alcohol and gasoline at 350-400 ℃, the resistance sensitivities are as follows： 2.9, 2.9, 53.5 and 43.4. The conductivity of pure ZnO could be decreased by doping of Bi203＋Cu20. The sensitivity of the doping sample is higher than that of pure ZnO sample at 250-350℃, which indicate that gas sensor array has certain selectivity to gasoline. The gas sensitivity mechanism of doping was also discussed.