期刊文献+

嵌入式存储器的内建自修复设计 被引量:6

A Built-In Self-Repair Design for Embedded Memory
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摘要 目前,关于嵌入式存储器的内建自测试(MBIST)技术已经日趋成熟。基于这种背景,研究了一种高效的内建自修复(MBISR)方法,试验表明它具有低面积开销和高修复率等优点,保证了嵌入式存储器不仅可测,而且可修复,极大地提高了芯片的成品率。 The technology of memory built-in self-test (MB1ST) about embedded memories is growing more perfect, based on this background, we present a reasonable method for memory built-in self-repair (MBISR), experimental results show that a high repair rate and a low area overhead are, achieved with the BISR scheme, such that the embedded memories can be tested and repaired simultaneously, and the performance can be improved dramatically.
出处 《微电子学与计算机》 CSCD 北大核心 2007年第2期79-81,84,共4页 Microelectronics & Computer
关键词 嵌入式存储器 内建自测试 内建自修复 Embedded memory BIST BISR
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参考文献5

  • 1Semiconductor Industry Association (SIA).International technology roadmap for semiconductors(ITRS),2000
  • 2鉴海防,王占和,李印增,张昭勇.SoC嵌入式flash存储器的内建自测试设计[J].微电子学与计算机,2005,22(4):87-91. 被引量:8
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二级参考文献10

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