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NiCr薄膜电阻TCR的影响因素 被引量:2

Influencing factors on thin-film NiCr resistor's TCR
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摘要 影响NiCr薄膜电阻TCR的因素很多,我们分别从溅射淀积工艺和热处理工艺来研究和探讨NiCr薄膜电阻TCR与溅射时的真空度、溅射速率、基片温度、薄膜厚度及热处理温度和时间等因素的关系,从而为提高NiCr薄膜电阻的稳定性和降低其TCR值提供有益的条件。 There are many factors influencing the thin-film NiCr resistor's TCR(temperature coefficient of resistance), such as the vacuum degree during sputtering, sputtering rate, substrate temperature, film thickness and temperature and its holding time in heat-treatment. Discusses the relationships between TCR and these factors in view of the sputtering/depositing process and heat-treatment technology, thus providing necessary conditions for improving the stability of such resistors and lowering their TCR values.
作者 李丙旺
出处 《真空》 CAS 北大核心 2007年第1期18-20,共3页 Vacuum
关键词 TCR 真空度 溅射速率 基片温度 TCR vacuum sputtering rate substrate temperature
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参考文献4

  • 1James S J and Leonard R E.混合微电路技术手册[M].北京:电子工业出版社,2004,50-56.
  • 2Campbell D S and Hendry B.The Effect of Composition on the Temperature Coefficient of Resistance of NiCr Films[J].B.J.Appl.Phys.1965,16,1719-1725.
  • 3Tummala R R and Knickerbocker J.Advanced Cofired Multichip Technology at IBM[M],1991.
  • 4Shambrook K P and Trask P A.High Density Multichip Interconnect Proc[M].Electronic Components Cont.,Houston,TX.May,1989.

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