摘要
影响NiCr薄膜电阻TCR的因素很多,我们分别从溅射淀积工艺和热处理工艺来研究和探讨NiCr薄膜电阻TCR与溅射时的真空度、溅射速率、基片温度、薄膜厚度及热处理温度和时间等因素的关系,从而为提高NiCr薄膜电阻的稳定性和降低其TCR值提供有益的条件。
There are many factors influencing the thin-film NiCr resistor's TCR(temperature coefficient of resistance), such as the vacuum degree during sputtering, sputtering rate, substrate temperature, film thickness and temperature and its holding time in heat-treatment. Discusses the relationships between TCR and these factors in view of the sputtering/depositing process and heat-treatment technology, thus providing necessary conditions for improving the stability of such resistors and lowering their TCR values.
出处
《真空》
CAS
北大核心
2007年第1期18-20,共3页
Vacuum
关键词
TCR
真空度
溅射速率
基片温度
TCR
vacuum
sputtering rate
substrate temperature