化学机械抛光液的研究进展

Development of Chemical Mechanical Polishing Slurry

化学机械抛光(CMP)是唯一能对亚微米级器件提供全局平面化的技术,介绍了化学机械抛光浆料的品种、应用范围、研究进展以及浆料的组成和抛光原理,随着硅单晶片向大尺寸的发展,以及集成电路集成度的提高、线宽的进一步减小,须加强对化学机械抛光液的开发和抛光机理的研究,满足化学机械抛光的技术和工艺要求。

Chemical mechanical polishing （CMP） is the only technique known to provide global planarization of submicron devices. Development of CMP slurry, variety, chemical composing and polishing mechanism are reviewed. Accompanied with enlarging size of silicon wafer, increasing in integration level and decreasing in line width, it should be strengthened on the study of CMP slurry and CMP mechanism.