浅施主杂质在对称GaAs/Al_xGa_(1-x)As双量子阱中的束缚能

Binding Energy of Shallow-donor Impurities in Symmetrical GaAs/Al_xGa_(1-x)As Double Quantum Wells

为了研究双量子阱的垒宽、阱宽以及杂质位置对浅施主杂质束缚能的影响,在有效质量近似下,采用变分方法计算了对称GaAs/Alxga1-xAs双量子阱中浅施主杂质的束缚能,本文结果与已有结果吻合较好．体系束缚能随垒宽的增加越来越接近单阱的情况,并且在阱宽较窄时体系束缚能有一最小值．

In order to investigate the well and barrier width and the position of donors effect on the binding energies of shallow-donor impurities, the binding energy of the system in symmetrical GaAs-Ga1-xAlxAs double quantum wells are calculated by using a variational method within the effective-mass approximation. The results are in good agreement with recorded results. It is found that, the binding energy is close to those of the single well when the barrier width, increases, and the binding energy has a minimum when the barrier width gets smaller and smaller.