摘要
用脉冲激光沉积工艺制备（Ba0.5Sr0．5）TiO3（简称BST）薄膜和（Ba0.5Sr0．5）TiO3／LaNiO3（简称BST／LNO）薄膜。在650℃原位退火10min，获得了（100）和（110）择优取向生长的BST和BST／LNO薄膜，薄膜晶粒呈柱状结构，BST薄膜和BST／LNO异质结构薄膜的晶粒尺寸分别为150～200nm和50～80nm。在室温和1MHz条件下，BST薄膜和BST／LNO异质结构薄膜的相对介电常数和介电调谐率分别达811和58．9%、986和60．1%；用LNO作底电极，可增益介电常数和介电调谐率。
（Ba0.5Sr0.5）TiO3 （BST） thin film and （ Ba0. 5 Sr0.5 ） TiO3/LaNiO3 （BST/LNO） heterostructure thin films were deposited on Pt （111）/Ti/SiO2/Si（100） substrates by a pulsed laser deposition process. Annealed at 650℃ for 10min, the preferred （100）-and （110）-oriented columnar-grained BST and BST/LNO thin films were obtained. The grain size of BST and BST/LNO thin films are about 150-206 nm and 50-80 nm ,respectively. Respectively, the dielectric constants and dielectric tunabilities of BST and BST/LNO thin films were 811 and 58.9%, 986 and 60.1%, respectively. The BST films on LNO coated Pt/Ti/SiO2/Si substrates had higher dielectric constant and tunability.
出处
《压电与声光》
CSCD
北大核心
2007年第1期80-82,86,共4页
Piezoelectrics & Acoustooptics
基金
广东省自然科学基金资助项目(5001825)
关键词
脉冲激光沉积
钛酸锶钡薄膜
异质结构
介电调谐率
探测优值
pulsed laser deposition
BST thin film
heterostructure
dielectric tunability
figure of merit
