摘要
研究了采用射频磁控溅射法在SiO2/Si衬底上制备ZnO薄膜工艺中溅射功率、氧氩比(V(O2)/V(Ar))及衬底温度对ZnO薄膜结构的影响。利用X-射线衍射(XRD)和扫描力显微镜(AFM)对薄膜进行结构性能分析,表明其结构性能随工艺参数变化的规律。利用优化的工艺条件:射频功率60 W、V(O2)/V(Ar)为0.55和衬底温度350℃,在DLC/Si衬底上制备了ZnO薄膜,制作加工成声表面波滤波器件,测试分析了频率响应特性,中心频率为596.5 MHz。
This study investigated the microstructure of ZnO films deposited on SiO2/Si substrate with different sputtering conditions of RF power, V（O2 ）/V（Ar） ratio and substrate temperature. ZnO films were prepared on DLC/Si substrate under the optimized parameters such as the RF power of 60 W, V（O2 ）/V（Ar） ratio of 0.55 and substrate temperature of 350℃. Finally, interdigital transducers were fabricated on the films to measure the characteristics of the SAW device, and the frequency response was analyzed. The center frequency was measured at about 596.5 MHz.
出处
《压电与声光》
CSCD
北大核心
2007年第1期83-86,共4页
Piezoelectrics & Acoustooptics
