磁控溅射SiC薄膜及其光电特性研究

The optoelectronic properties of SiC films deposited by RF magnetron sputtering

用射频磁控溅射法制备了SiC薄膜,并对其进行了退火处理。用AFM观察了薄膜的表面形貌,测量了薄膜的厚度与透射光谱。用J.C.Manifacier提出并由R.Swanepoel加以修正和完善的包络线法对薄膜透射光谱进行了分析计算,并结合Tuac公式确定了薄膜的光学带隙。结果表明:在不同射频功率下制备的薄膜均有较强的蓝紫光吸收特性,在低功率下可制备出表面平整,吸收系数小,光学带隙大的薄膜;退火处理后薄膜的吸收系数减小,光学带隙增大,晶粒向圆形转化且尺寸变大。

SiC thin-films were prepared by RF-magnetron sputtering technique （RMS） and then annealed. The surface morphology of the films has been observed by AFM. The thickness and transmission spectrums were measured and the method of envelopes brought up by J. C. Manifacier and amended by R. Swanepoel was employed to analyze the transmission spectrums, and then the band gap was got with Taue equation. The results show that all the films deposited at different RF-power have a strong absorbency from blue to purple lights,and when the RF-power is low, the SiC thin-films which possess smooth surface, small absorption coefficient and large band gap can be deposited. After annealing processes, the absorption coefficient becomes smaller and the band gap becomes larger. At the same time, the size of the gains turns to round and becomes bigger.