摘要
以Ag、Bi、Sb、Te为原料在1373K真空熔炼合成了AgxBi0.5Sb1．5-xTe3（x=0～0．5）合金。微观组织和结构分析显示，真空熔炼的合金具有层状组织特征，属R3m晶体结构，当x≥0．2时出现面心立方AgSbTe2相。电学性能测试表明，在300580K温度范围内合金的电导率随温度升高而下降，掺Ag后合金的电导率明显提高，掺Ag量为X=0．1试样的最大值达到2．3×10^5S／m。材料的Seebeck系数均为正值，表明掺Ag合金为P型半导体。
AgxBi0.5Sb1.5-xTe3 （x=0 to 0. 5） alloys were synthesized via vacuum melting at 1373K from elemental Ag, Bi,Sb and Te powders. It was found that the alloys have a layered microstructure and are mainly of the R3m rhombohedral lattice structure,except the minor face centered cubic phase AgSbTe2 occurred when x≥0.2, The electrical transport measurements showed that the electrical conductivities of the alloys decrease with the increase of temperature between 300 and 580K,with the maximum of 2.3 × 10^5S/m for the Ag-doped alloy（x= 0.1）. All samples have positive Seebeek coefficients,indicating that Ag is a p-type dopant. Key words： thermoelectric materials; Ag-Bi-Sb-Te alloy; vacuum melting; thermoelectric properties
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第2期246-248,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50471039
50522203)
