摘要
采用磁控溅射方法,在弯曲的玻璃基片上制备出受张应力作用的FeCoSiB非晶薄膜,研究了张应力大小对FeCoSiB薄膜的磁畴、矫顽力、剩磁、各向异性场等磁特性的影响。结果表明,薄膜的畴结构显著依赖于张应力,其磁畴宽度随张应力增加而增加;张应力导致FeCoSiB薄膜内形成较强的磁各向异性,其各向异性随应力的增大而增大。
FeCoSiB amorphous thin films under tensile stress were grown on the glass substrates using boweasubstrate sputtering technique. The influence of tensile stress on the magnetic domain, coercivity, remanence and anisotropy field of the samples was investigated. The results show that the domain structures strongly depend on the tensile stress. The domain width increases with the increase of the tensile stress. A strong anisotro- py is induced by the applied tensile stress and the anisotropy increases with the increase of the stress.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第2期256-258,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50501004)