摘要
提出一种采用双对极鳍线—微带过渡的Ka频段2×2波导基功率合成结构.这种两路过渡结构在31.0-40.0GHz范围内实测背对背插损小于0.9dB,回波损耗优于12.0dB.组合四块GaAs MMIC功率单片制作的这种新型功率合成器,在32.0-36.0GHz频带、±1.21dB增益波动下获得6W的最大饱和输出功率,带内平均合成效率为82%,且在25W的直流功耗下也保持了极佳的散热性能.这些测试结果验证了本方案的可行性.
A waveguide-based 2 × 2 power-combining structure at Ka-band by using double antipodal finline-to-microstrip transitions was presented. A very low back-to-back insertion loss of 0.9dB and return losses better than 12.0 dB at the range of 31.0 - 40.0GHz frequencies were obtained from the two-way transition structure. By using 4 GaAs monolithic-microwave integrated-cireuit(MMIC) power amplifiers, the new combining circuit produced up to 6W maximum power output with a gain variation of ±1.21 dB within the band of interest (32.0 - 36.0GHz). The average combining-efficiency over the operating band was estimated at 82%. This combiner also provides an excellent thermal property, sustaining as much as 25W of dc power consumed by the MMIC amplifiers. The measured results demonstrate the feasibility of the proposed approach.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第1期35-37,55,共4页
Journal of Infrared and Millimeter Waves
基金
国防重点实验室基金资助项目(51437050103DZ02)
关键词
毫米波
功率合成
双对极鳍线
合成效率
millimeter-wave
power-combining
double antipodal fin-line
combining-efficiency