铬掺杂0.2PZN-0.8PZT压电陶瓷的XRD和Raman散射分析

XRD AND RAMAN SCATTERING ANALYSIS ON CHROMIUM DOPED 0.2PZN-0.8PZT PIEZOCERAMICS

采用XRD与Raman散射研究了Cr掺杂0.2PZN-0.8PZT压电陶瓷微观结构的变化。Cr掺杂导致三方—四方相变和晶体四方度增大,Raman散射关于晶格参数和相结构的分析得到了XRD的验证。通过研究不同结构中Ra-man振动模式,可揭示掺杂诱导的两相共存压电陶瓷微观结构的变化。

The microstructural changes originated from Cr doping in 0.2PZN-0.8PZT piezoelectric ceramics were investigated by means of XRD and Raman scatteringl The phase transition from rhombohedral to tetragonal and the increase of crystal tetragonallity are caused by Cr addition. The studies about the lattice parameters and the phase transition through Raman scattering are confirmed by XRD. So, the microstructural changes induced by doping in the piezoelectric ceramics with tetragonal and rhombohedral structures simultaneously can be revealed through the analysis of the Raman vibration modes in different structures.