退火条件对注Mn GaAs结构的影响

Effect of Annealing on Structure of GaAs by Mn Ion Beam Implantation

通过离子注入在半绝缘GaAs衬底中掺引入Mn杂质,进行不同温度的退火后,在样品中形成了磁性MnAs粒子.利用原子力显微镜和磁力显微镜对样品的表面进行分析,发现退火条件会影响样品磁性粒子的分布.运用二次离子质谱仪测量了样品中Mn的深度分布,发现退火温度对样品中Mn的分布有很大影响.

Manganese was doped into semi-insulating GaAs substrate by high-energy ion implantation to fabricate magnetic semiconductor, All the samples are annealed at different temperature, Through the sample surface analysis by Atomic Force Microscope （AFM） and Magnetic Force Microscope （MFM）, it is showed that the condition of annealing will effect the distribution of the grain in sample. The distributions of Mn in annealed samples were measured by Secondary Ion Mass Spectrometry （SIMS）, it is showed that the temperature of annealing has great affection on the distribution of Mn in sample.