掺Er/Er+O的GaN薄膜光学性质的研究

Study on optical properties of Er/Er+O doped GaN thin films

利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模,并讨论了共注入O对Er离子发光的影响.在Raman散射谱中,对于注Er的GaN样品出现了300cm-1和670cm-1两个新的Raman峰,而对于Er+O共注样品,除了上述两个峰外,在360cm-1处出现了另外一个新的峰,其中300cm-1峰可以用disorder-activated Raman scattering(DARS)来解释,670cm-1峰是由于与N空位相关的缺陷引起的,而360cm-1峰是由O注入引起的缺陷络合物产生的.由于360cm-1模的缺陷出现,从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降.

We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er ＋ O co-implanted CaN, and discuss the influence of O ions on Er^3＋-related infrared photoluminescence （PL）. It is found that Er^3＋ implantation introduces new Raman peaks in Raman spectra at frequencies 300 and 670 cm^- 1, and one additional new peak at 360cm^- 1 is introduced after Er ＋ O implantation. It is proposed that the broad structure around 300 cm^-1 mode originates from disorder-activated scattering （DARS）. The Raman peak at 670 cm^-1 is assigned to nitrogen vacancy related defects. The 360 cm^-1 peak is attributed to the O implantation induced defect complexes （vacancies, interstitial, or anti-sites in the host）. The appearance of the 360 cm^- 1 mode results in the decrease of the Er3 ^＋ -related infrared PL of CaN ： Er ＋ O.