MOS电阻阵的非均匀性测量及补偿方法研究

Nonuniformity Characterization and Correction of MOS Resistor Array

红外MOS电阻阵列是现代红外成像仿真系统中的关键元件。由于MOS电阻阵具有较强的热非均匀性,因此在进行红外仿真时必须对其进行实时补偿。文中对基于MOS电阻阵的关键技术——MOS电阻阵帧元非均匀性补偿技术进行深入探讨和研究,并提出了相应的解决方案:通过离线测试,实测得到每一帧元的电压温度特性曲线,建立电压温度补偿数据表格,使得驱动MOS热电阻面阵的灰度数据与表格数据相匹配,从而实现对MOS电阻阵的修正。实验证明,文中提出的方法能够很好地解决对MOS电阻阵非均匀特性进行补偿的问题,并已在基于MOS电阻阵的红外场景生成器中应用,取得了满意的效果。

In the full paper, we explain in detail our research results on nonuniformity characterization and correction of MOS resistor array; in this abstract , we just add some pertinent remarks to the two topics of explanation： （1）the causes and characteristics of nonuniformity of infrared images of MOS resistor array and （2）the nonuniformity measurement and compensation algorithm of MOS resistor array; in topic 1, we find that the main causes of the nonuniformity are the nonlinearity of the resistor array and the nonuniformity of background voltage; in topic 2, we measure voltage vs temperature curves by testing MOS resistor array offline and then establish their compensation table（Table 1 in the fuil paper）, whereby each resistor in MOS resistor array can be corrected in real-time so that its gray degree can match the corresponding datum in Tablel; also in topic 2, we generate the voltage vs temperature curve for each resistor in the array（a typical curve is shown in Fig 4 in the full paper）. Our approach was adopted in a real IR scene projector based on MOS resistor array and the user expresssed satisfaction.