摘要
研究了采用双RESURF技术的槽栅横向双扩散MOSFET(DRTG-LDMOS).讨论了双RESURF技术对击穿电压的影响,以及DRTG-LDMOS的电容特性.与传统的槽栅器件结构相比,新结构在相同的漂移长度和导通电阻下,击穿电压提高了30V,并表现出优异的频率特性.
We describe a new lateral double diffused trench gate MOSFET with double RESURF technology for the first time. We simulate the breakdown voltage and capacitance, especially the influences of double RESURF technology on the breakdown voltage. Compared with conventional TG-LDMOS, the breakdown voltage of the new structure is improved by 30V with the same length of the drift region and on-state resistance,and the structure shows excellent RF characteristics.
基金
防科技预先研究和电子发展基金资助项目~~
