摘要
选取了采用0.25μm工艺的两组器件进行研究.通过对这两种器件关态泄漏电流、跨导和栅电流等电学参数进行分析,得出当器件发展到深亚微米阶段时,影响其辐射效应的主要原因是场氧化层中的陷阱电荷.并对相关机理进行了分析和仿真验证.
We study the total ionizing dose sensitivity of 0.25μm nMOSFETs. The off-state leakage current, transconductance,and the gate leakage current of the devices are monitored. Experiment shows that the effect on irradiation is mostly caused by the space charges in the field oxide,which is verified by simulation.
基金
国家自然科学基金资助项目(批准号:60376024)~~
关键词
X射线
辐射
总剂量效应
关态泄漏电流
X-ray
irradiation
total dose effect
off-state leakage current
