基于SOI的集成硅微传感器芯片的制作

Fabrication of Monolithic Silicon Multi-Sensor on SOI Wafer

为满足小体积、多参数测量的要求,采用SOI硅片,设计了一种测量三轴加速度、绝对压力、温度参数的单片集成硅微传感器,其中加速度、绝对压力传感器基于掺杂硅压阻效应,温度传感器基于掺杂硅电阻温度效应.根据集成传感器的结构,制定了相应的制备工艺步骤.针对芯片上各电阻间金属引线的可靠性问题和加速度传感器质量块吸附问题提出了有效的改进方法.最后给出了集成传感器芯片的性能测试结果.

A monolithic silicon multi-sensor on SOI wafer that consists of a three-axis piezoresistive accelcrometer,a piezorsistive absolute pressure sensor,and a silicon thermistor temperature sensor is presented. The fabrication process of the sensor is described. An effective micromachining process is developed to improve the reliability of the metal wire in the multi-sensor and to avoid adhesion between the PYREX glass and silicon mass in the process of anodic bonding. Finally,the measurement results of the sensor are shown.