C^+注入a-SiN_x∶H的原子化学键合的研究

XPS of SiCN Thin Films Prepared by C^+ Implantation in Amorphous SiNx∶H

常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiNx∶H薄膜进行C+注入,能量为30keV,剂量为2×1017cm-2.对C+注入的SiNx薄膜在800℃的温度下,进行2h的常规炉退火处理.通过XPS,AES的测量得到,经800℃高温退火处理后的薄膜形成了部分SiCxNy结构.用喇曼、XPS等分析手段对薄膜结构及成分进行了测量与分析,得到不同退火温度对离子注入形成SiCN薄膜结构与成分的影响,认为高温退火后薄膜中硅含量与SiCxNy薄膜的形成有重要的关系.

This paper reports an experimental procedure to analyze the properties of SiCN films. Hydrogenated amorphous silicon nitride films （a-SiNx： H） were implanted with 30keV C^＋ with a doping dose of 2 × 10^17cm^-2 at room temperature. The composition,structure,and bonding structure of SiCN films treated by thermal annealing for 2h at 800℃ were analyzed with X-ray photoelectron spectroscopy （XPS） ,Auger electron spectroscopy （AES）, and Raman spectroscopy. SiCN films that exhibit complicated bond structures with carbon content up to 45% -50% can be determined by AES. In addition,the C concentration varies with the depth and shows two distributions. Furthermore, a typical XPS spectrum showing the C-Si, C-N, and Si-N bonds demonstrates that the films after 800℃ thermal annealing for 2h are composed of two structures at different depths,one is SiC and SiNx ,and the other is SiCxNy. In summary,the existence of the ternary SiCN can be observed with reasonable silicon content at appropriate annealing temperatures. These experimental results may provide information about the possibility and conditions of growing SiCN films,and they may get important application in future engineering practices.