摘要
在分析传统带隙基准电路的基础上,提出一种采用电流模式结构的低电压带隙基准电路。该电路能够输出200mV^1.25V的宽范围的电压,并使用了与电源无关偏置以及带负反馈网络的二级运放,提高了输出电压的精度。采用CMOS0.35μm工艺实现时,工作电压可在1.1V^1.5V。Hspice仿真结果表明,工作电压为1.5V时,电路的有效温度系数为14ppm/℃。
Based on analysis of the conventional bandgap reference circuit, a low operating voltage bandgap reference circuit using current-mode architecture, is proposed in this paper, which can output voltage as low as 200mV. Meanwhile,the operation amplifier with the negative feedback network and the bias independent on operating voltage, are used to improve the precision of the circuit. Implemented by 0.35μm CMOS technology, this circuit can work under the operating voltage of 1.1V to 1.5V. The Hspice simulation results show that the effective temperature coefficient is 14ppm/℃ under the operating voltage of 1.5V.
出处
《微电子学与计算机》
CSCD
北大核心
2007年第3期95-98,共4页
Microelectronics & Computer
关键词
CMOS集成电路
带隙基准
低电压
电压基准
CMOS integrated circuits
bandgap reference
low voltage
yoltage reference