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4H-SiC功率MESFET直流I-V特性解析模型 被引量：1

An Analytical Model of I-V Characteristics of 4H-SiC Power MESFET's
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摘要 提出了一种改进的4H-SiC MESFET大信号直流解析模型。该模型基于栅极下面电荷的二维分布进行分析,在考虑电场相关迁移率、速度饱和及沟道内电荷堆积的基础上,计入沟道长度调制效应,建立基于物理的沟道长度调制效应模型。计算结果表明,计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。 An improved analytical model for 4H-SiC MESFET＇s was developed, which is based on an analysis of the 2-D distribution of charges under the gate, with field-dependence mobility, velocity saturation, charge buildup and channel-length modulation effects taken into consideration. Simulation results show that the model with channellength modulation effects included agrees with the measured I-V characteristics in the saturation region.
作者 徐跃杭 徐锐敏 延波 国云川 王磊
机构地区 电子科技大学微波工程系
出处 《微电子学》 CAS CSCD 北大核心 2007年第1期1-4,共4页 Microelectronics
基金 国家重点基础研究发展计划资助项目(513270101)
关键词 4H-SIC MESFET I-V特性 解析模型 4H-SiC MESFET I-V characteristics Analytical model
分类号 TN304.24 [电子电信—物理电子学]
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参考文献8

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同被引文献14

  • 1徐跃杭,徐锐敏,延波,王磊.Advanced SPICE-Modeling of 4H-SiC MESFETs[J].Journal of Electronic Science and Technology of China,2007,5(1):62-65. 被引量：2
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  • 10ROSCHKE M,SCHWIERZ F.Electron mobility models for 4H,6H,and 3C SiC[J].IEEE Transaction on Electron Devices,2001,48(7):1442-1447.

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微电子学
2007年 第1期

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