与常规CMOS工艺兼容的高压PMOS器件设计与应用

Design of High Voltage PMOSFET Compatible with Standard CMOS Technology

采用常规P阱CMOS工艺,实现了与CMOS工艺兼容的高压PMOS器件。制作的器件,其击穿电压为55 V,阈值电压0.92 V,驱动电流25 mA。对所设计的CMOS兼容高压PMOS器件的制造工艺、器件结构和测试等方面进行了阐述。该器件已成功应用于VFD平板显示系列电路。

High voltage PMOSFET＇s compatible with standard CMOS technology is designed and implemented in a standard twin-well CMOS process. The high voltage PMOSFET has a breakdown voltage of - 55 V, a threshold voltage of - 0. 92 V and driving current of 25 mA. The fabrication process, device structure and PCM testing are described. This device is suitable for VFD driver application.