摘要
采用正面无保护的背腐蚀方法分离p-n结,用SEM图观察了背腐蚀后硅片表面形貌的变化,对背腐蚀与刻边分离p-n结样品的光生电动势进行了比较,用能带理论对其差别做了深入的解释。
Separating p-n junction by using of back etching method without surface protect was studied, also the surface by SEM pictures. The photo-induced voltage between the back etching and edge etching silicon were compared, explaining the difference by means of the theory of energy bands.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2007年第2期165-168,共4页
Acta Energiae Solaris Sinica
基金
上海市科委项目"高效多晶硅太阳电池关键技术及中试研究"的奖金支持项目(03DZ12028)
关键词
背腐蚀
光生电动势
能带
back etching
photo-induced voltage
energy bands
