电沉积太阳电池用Cu(In,Ga)Se_2薄膜

Electrodeposition of Cu(In,Ga)Se_2 Thin Films for Solar Cells

在Mo基底上,采用恒电位法从含有CuCl2、InCl3、GaCl3、H2SeO3、柠檬酸的水溶液中电沉积制备Cu(In,Ga)Se2薄膜,用HCl调节pH值为2.5,并对沉积薄膜400℃左右Ar气氛中退火20min。对退火前后的膜进行X射线衍射,扫描电镜和能谱分析仪分析,结果表明,电沉积制备的Cu(In,Ga)Se2薄膜为黄铜矿结构,退火后,共沉积薄膜的结晶度提高,晶粒尺寸增加,Se含量减少。

Cu （In, Ga）Se2polycrystalline thin films are potentiostatically electrodeposited on Mo substrates from an aqueous solution containing CuCl2, InCl3, H2SeO3 and citric acid of pH around 2.5 adjusted with HCl. The films are annealed at temperature about 400℃ in an Ar flowing stream. The as-grown and annealed films are characterized by X-ray diffraction, scanning electronmicroscopy and EDS studies. Annealing treatment improves the crystallinity of electrodeposited films and the effective grain size increases, resulting in the formation of Cu （In, Ga）Se2 chalcopyrite structure.