摘要
The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction （XRD）. The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800℃ . The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.
The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction （XRD）. The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800℃ . The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.
基金
the National Natural Science Foundation of China(Nos.50472010,10635010)
