摘要
分析了场发射阵列阴极的跨导、电容以及阵列阴极的发射电流密度、电子束直径、电流稳定性对微波器件性能的影响,并提出了相应的改善措施,有效地提高了微波器件的性能.最后,概述了金刚石薄膜及碳纳米管阵列阴极在微波器件中的应用情况,目前虽然还不成熟,却显得有极大的潜力.
The influences of FEAs＂ capacitance, transconductance, emission current density, electron beam diameter and emission stability on the performance of the microwave devices were analyzed. Some corresponding proposals were introduced, which enhanced the performance of the microwave devices effectively. It also discussed the current status of diamond carbon films and carbon nanotubes （CNTs） applied in microwave tubes. The application is immature now, but their potential is very big.
出处
《电子器件》
CAS
2007年第1期29-32,36,共5页
Chinese Journal of Electron Devices
关键词
场发射阵列阴极
微波器件
金刚石薄膜
碳纳米管
field emitter arrays
microwave devices
diamond carbon films
carbon nanotubes
