AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取(英文)

Parameter Extraction for Small Signal Equivalent Circuit of AlGaN/GaN High Electron Mobility Transistors

本文在高电子迁移率晶体管（HEMT）小信号等效电路模型的基础上，考虑了A1GaN／CmNHEMT的结构特性，具体分析了寄生参数和本征参数的提取方法．采用这些方法，实际测量了5～10GHz频率下HEMT器件的小信号S参数并提取了它的电学参数。S参数的计算值与实际测量值进行了比较．实验结果表明此方法简单易行。较为精确．

Considering the peculiarities of AlGaN/GaN high electron mobility transistors （HEMTs）, a model of extracting parasitic and intrinsic parameters for HEMTs small signal equivalent circuit is presen- ted. The electrical parameters and S-parameters at 5 - 10 GHz for the AlGaN/GaN HEMT device have been extracted with this model. The calculated S-parameters match the measured data well. It is indicated that this model is simple and feasible.