氧氩比对ZnO薄膜晶体结构和导电性能的影响

Effect of O_2 to Ar ratio on structure of crystallization and function of conducting electricity of ZnO thin film

探讨氧氩比对ZnO薄膜晶体结构和导电性能的影响。利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,在其他反应条件不变的情况下,改变氩氧比,测量了样品的晶体结构和导电性能。随着反应气氛中氩气含量的增加,(002)面衍射峰的强度有所提高,说明薄膜的结晶质量有所改善,衍射峰略向θ角减小的方向移动。随着反应气氛中氩气含量的增多、氧气含量的减少,ZnO薄膜的方块电阻明显减小,说明薄膜的电阻率随反应气氛中氩气的增加而明显减小。

To explore effect of O2 to Ar ratio on structure of crystallization and function of conducting electricity of ZnO thin film. C-axis uniquely oriented ZnO films are prepared by DC reactive magnetron sputtering on （100） Si substrate, under present circumstances changes O2 to Ar ratio. Which measures the crystal structure and the function of conducting electricity of the sample. The result shows that with the increase of argon in reaction atmosphere , the intensity of （002） diffraction peak increase. This proves the crystal quality of the thin film has improved and diffraction peak moves slightly towards the direction that angle θ decreases. With the increase of argon in reaction atmosphere and the decrease of oxygen, square resistance ZnO thin film decreases obviously which shows resistivity of thin film decreases obviously with the increase of argon in reaction atmosphere.