摘要
CulnSe2 （CIS） thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass （SLG） substrates. A thermal processing in Se atmosphere at 450℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy （EDS） and scanning electron microscopy （SEM）, respectively. X-ray diffraction （XRD） studies show that the annealing in Se atmosphere at 450℃ promotes the structural formation of CIS chalcopyrite structure.
CulnSe2 （CIS） thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass （SLG） substrates. A thermal processing in Se atmosphere at 450℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy （EDS） and scanning electron microscopy （SEM）, respectively. X-ray diffraction （XRD） studies show that the annealing in Se atmosphere at 450℃ promotes the structural formation of CIS chalcopyrite structure.
