摘要
对经逐代耐盐性筛选的栽培和野生大豆杂交组合(‘Jackson’בBB52’)F4代‘JB185’株系及其亲本幼苗以不同浓度NaCl和等渗(-0.53 MPa)PEG-6000、NaCl、钠盐(无Cl-)和氯盐(无Na+)溶液处理6d。结果表明:(1)随NaCl浓度的提高,3种遗传材料幼苗叶片相对电解质渗漏率和MDA含量均呈上升趋势,叶绿素含量除‘BB52’和‘JB185’在NaCl 50mmol/L处理时显著上升外,其余处理呈下降趋势,‘JB185’变化介于两亲本之间。(2)不同离子胁迫下,它们叶片相对电解质渗漏率和MDA含量较对照多表现增加趋势,其中‘BB52’和‘JB185’在钠盐(无Cl-)处理下的变化明显大于氯盐(无Na+)处理。叶片中游离态和束缚态Put、Spd和Spm含量都较对照明显提高,但‘BB52’和‘JB185’在钠盐(无Cl-)处理下游离态(Spd+Spm)/Put比值和束缚态多胺总量为3种盐处理中最低。表明‘JB185’与野生大豆‘BB52’种群一样对Na+敏感而对Cl-表现较强的耐性。
The seedlings of the F4 hybrid strain ‘JB 185' selected for salt tolerance generation by generation, their parents Glycine max cv. Jackson and Glycine soja population ‘BB52' were treated with different NaCl concentrations and iso-osmotic (-0.53 MPa) PEG-6000, NaCl, Na^+ (without Cl^-) and Cl^- (without Na^+) solutions for 6 d. The results showed that: (1) The relative electrolyte leakage and malondialdehyde (MDA) content in leaves of the above three soybean seedlings showed an increase trend when the NaCl concentration was elevated, but chlorophyll contents decreased except the significant increase in ‘BB52' and ‘JB 185' under NaCl 50 mmol/L stress. The change in ‘JB 185' was between its parents (Fig. 1). (2) Under different iso-osmotic stresses, the relative electrolyte leakage and MDA contents in leaves of three soybean seedlings also increased mostly, the changes in ‘BB52' and ‘JB 185' under Na^+ (without Cl^-) stress were more than those under Cl^- (without Na^+) stress (Fig.2). The free and bound Put, Spd and Spm contents in leaves all increased when compared with the control, the ratios of free (Spd+Spm)/Put and total bound polyamines in ‘BB52' and ‘JB 185' seedlings under Na^+ (without Cl^-) treatment were the lowest one among three iso-osmotic salt stresses (Tablesl, 2). The results indicate that the F4 hybrid strain ‘JB 185' is more sensitive to Na^+ than Cl^- as its wild parent ‘BB52' population.
出处
《植物生理与分子生物学学报》
CAS
CSCD
北大核心
2007年第1期46-52,共7页
Journal Of Plant Physiology and Molecular Biology
基金
国家自然科学基金(No.30400280)
南京农业大学作物遗传与种质创新国家重点实验室开放基金(No.ZW2005014)资助。~~