UFPA器件微桥腐蚀工艺的研究

Etching microbridge for UPFA devices

利用硅单晶的各向异性腐蚀技术,研究了UFPA探测器的微桥腐蚀工艺.采用独特的腐蚀装置在厚度为300μm的硅基片上成功地制备了腐蚀坑深度为260μm,桥面宽度为2 mm的微桥结构.该装置能有效保护硅基片正面免受腐蚀液的漏蚀,从而可实施热释电薄膜的沉积先于微桥制备的技术线路,对提高器件的成品率具有重要的意义.

The etching processing of micro-bridge was designed. The uncooled infrared focal plane arrays （UFPA） micro-bridges on a silicon chip whose thickness is 300μm have been fabricated by wet chemical etching technique. The etch pits are 260μm in depth and 2 mm in width. Using the technics and mechanism of anisotropic etching of monocrystalline silicon in unique etching equipments, the micro-patterns of the front side are protected effectively without being etching. The technique route that the preparation of films in advance of the fabrication of Si micro-bridges is carried out, which means the improvement of UFPA finished products.