摘要
本文用Ｘ射线衍射（ＸＲＤ）和高分辨电镜研究Ｃｏ薄膜在氩气气氛或真空条件下热处理时Ｃｏ／Ｓｉ和Ｃｏ／ＳｉＯ２体系的界面反应．结果表明：在氩气氛下４５０℃处理时，Ｃｏ薄膜均发生氧化，在Ｃｏ／Ｓｉ界面同时有硅化物形成，而在Ｃｏ／ＳｉＯ２界面，无硅化物产生．在真空条件下５００℃处理１小时，薄膜没有氧化，在Ｃｏ／Ｓｉ界面形成完整的ＣｏＳｉ２外延层．
Abstract We have investigated the Co/Si and Co/SiO2 interface reaction of the vaccum or Ar-annealed Co films using XRD and HREM techniques. The results showed that annealed at 450℃ under Ar ambient Co film was oxidized and silicide was observed at Co/Si interface but not at Co/SiO2 interface. Annealed at 50℃ for an hour under the vacuum condition,Co film was not oxidized and perfect epitaxial CoSi2 layer was formed at the Co/ Si interface.
