摘要
本文首次采用解析方法及二维计算机模拟讨论了ＲＥＳＵＲＦ原理应用于ＳＯＩＬＤＭＯＳ晶体管．研究表明：击穿电压随埋层ＳｉＯ２厚度增加而增加；击穿电压随Ｓｉ层厚度变化呈现Ｕ型曲线；当埋层ＳｉＯ２和Ｓｉ层厚度一定时，Ｓｉ层的杂质浓度存在一个临界值，在此浓度之下，可获得高的击穿电压．这个结论也适用于介质隔离的各种横向器件的击穿特性分析．
Abstract The application of RESURF principle to lateral DMOS transistors (LDMOS)in silicon-on-insulator(SOI) has been examined. The effects of the device struCture and doping concentration on breakdown voltage have been investigated by both analysis approach and twodimensional simulation. The breakdown voltage depends critically on the doping concentration. The breakdown voltage increases with the thickness of buried oxide, but shows a minimum with St layer thickness of a few micrometers. The results can also be applied to various lateral devices made with dielectric isolation.
