摘要
ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩＭｐｌａｎｔａｔｉｏｎｏｆＯＸｙｇｅｎ）材料中隐埋氧化层（ＢＯＸ：ＢｕｒｉｅｄＯＸｉｄｅ）的针孔漏电可使器件完全失效．本文用ＣｕＳＯ４电解电镀法测定了不同工艺条件制备的ＳＩＭＯＸ材料ＢＯＸ中的针孔密度，并用改进的二维ＩＲＩＳ程序定性分析了引起针孔的杂质临界颗粒尺寸．
Abstract The buried oxide (BOX) pinhole leakage can completely destroy the devices fabricated in the top silicon layer of SIMOX (Separation by IMplantation of OXygen) material. The CuSO4 electrolytic plating technique is introduced to characterize the pinhole densities of SIMOX wafers fabricated with different processing parameters. The critical size of particles causing pinholes in BOX is qualitatively analyzed by improved 2-dimensional IRIS program.
