摘要
寿命试验和噪声测试结果表明，亚表面齐纳基准二极管的主要失效模式是经历长时间应力作用后基准电压的突然退化，同时发现失效器件皆为高初始１／ｆ噪声器件，而且其寿命与初始１／ｆ噪声电压近似成反比关系．机理分析表明，１／ｆ噪声和基准电压退化均可归因于ｐ－ｎ结耗尽区内的位错．据此，可利用１／ｆ噪声测量对基准二极管的可靠性进行快速且非破坏性的评价．
Abstract It is shown by the accelerated lifetime test and noise measurement for subsurface zener reference diodes that their failure is caused by the degradation of reference voltage.It is found that all failure devices have high initial 1/f noise,and their lifetime are inversely proportional to the initial noise amplitude.The physical mechanisms of the 1/fnoise and the reference voltage degredation may be attributed to the dislocations located inthe space-charge region of p-n junction.Based on the results, 1/f noise measurement canbe used as a fast and non-destructive tool to evaluate the lifetime of zener reference diodes.
