摘要
针对现行Ｐ型杂质扩散工艺的不足，开展了受主双质掺杂新技术的研究．经对比实验和工艺论证，首先研究成功开管铝镓一步扩散法．应用证明，该项技术用于制造高压大电流晶闸管是可行的，产品电参数一致性和综合性能好，合格率高，为电力半导体器件研究和生产开创了一条先进的工艺途径．
Abstract In view of the inefficience of the current P-type impurity diffusion process,anew technology of acceptor double dope is investigated. Basing on contrast tests and process demonstration, a single-procedure open-tube aluminium and gallium diffusion methodhas been successfully developed, and its application has proved that the technology is feasible for producing high-voltage large-current thyristors,enabling products to gain goodconsistence of electrical parameters, well comprehensive characteristics and high rate ofqualified,and an advanced process has been developed for the research and production ofpower semiconductor devices.
基金
山东省科委重点资助
