摘要
对用低压MOVPE法生长的非掺GaN外延膜,在其光致发光谱峰位370mm、590um和740um附近测量了光致发光激发(PLE)谱.对于590um和740um附近的发光来说,各样品的PLE峰都位于360um处,而对于370um发光来说,大部分样品PLE峰位于280um处,而有的样品却位于260与300nm两个波长处,对这些结果进行了讨论.
Abstract We have measured photoluminescence excitation (PLE) spectra for the light emissions of 370urn,590urn and around 740um from undoped GaN films grown by lowpressure MOVPE.For the 590urn and 740um emissions,the PLE peak of each sample issituated at 360um:However,for the 370um emission,the PLE peaks from most samples aresituated at 280um,but the double peaks at the wavelengths of 260 and 300um instead ofthe single peak of 280um in the PLE spectra are measured for certain GaN samples. Wehave discussed the results.