转移电子光电阴极电子传输特性的蒙特卡罗模拟

Electron Transport Properties of Transferred Electron Photocathode

本文利用蒙特卡罗模拟方法计算了转移电子光电阴极的光电子输运特性，其中包括阴极的内部量子效率，电子的能量分布函数，谷间转移效率，同时也给出了阴极的时间响应特性．

Abstract The transport properties of transferred-electron field-assisted photocathode have been calculated by using Monte Carlo simulation method. The electron efficiency,transferred-electron percentage in L Valley, electron energy distribution function and transient time distribution function are presented. The results show that field-assisted bias and doping concentration in active region of the photocathode have strong effect on electron transport properties. The doping concentration should be greater than 1 × 1016cm-3 and field-assisted bias should be greater than 3 volts if high transferred-electron efficiency is expected. The peak response time of reflection mode Ag/p-InP transferred-electron photocathode varies from 2ps to 3ps with bias changing from 0￣-10 volts and is much shorter than that of transmission mode photocathode, whose peak response time is about 30ps.