摘要
在１６～４００Ｋ的温度范围内，测量了用常压ＣＶＤ方法制备的氟掺杂绒面ＳｎＯ２薄膜的霍耳效应，研究了膜的电导率，载流子浓度和迁移率等电导参数对制备条件的依赖关系．电导对温度的依赖关系表明：简并的，晶粒较大的多品ＳｎＯ２∶Ｆ膜，在低于１００Ｋ的温度范围内，以电离杂质散射为主，在高于１００Ｋ的温度范围内，主要的散射机构是晶格散射．
Abstract Hall measurements have been made in the temperature range of 16￣400K for the transparent conducting F-doped textured SnO2 films prepared by atmosphere pressure chemical vapour deposition (APCVD). The dependences of conductivity, carrier concentration and mobility on deposition condition were obtained. The results show that for these polycrystalline SnO2:F films with larger grains, below 100K , ion impurity scattering is dominant but over 100K lattice vibration scattering becomes dominant.
关键词
二氧化锡
薄膜
电导特性
掺杂
氟
CVD法
Chemical vapor deposition
Doping (additives)
Electric conductivity
Semiconducting films
