摘要
衬底晶向偏高度对Ｐ型＜１００＞硅外延埋层图形畸变影响很大，在通常的外延生长条件下，当Ｐ型＜１００＞衬底主晶向朝最近（１１０）方向偏离２～３°时，可得到十分满意的埋层图形．这个结果对于修订标准具有参考价值．本文从外延生长的微观机制出发，对产生埋层外延图形畸变的原因和实验结果进行了分析。
Abstract The orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer on P <100> silicon substrate. It has been shown that better pattern can be obtained by deviating the orientation of the P-type <100> wafer 2-3° from <100> axis toward the nearest <110> axis. It can be as a reference to revise the standard of epitaxial growth. We have disscused the reason of forming pattern distortion based on its micromechanism and growing dynamics.
