GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测

Contactless Measurement of Minority Carrier Diffusion Length and Hall Mobility of GaAs and Al_xGa_(1-x)As Epitaxial Layer

用微波介质波导法无接触测试了生长在半绝缘衬底上的ＧａＡｓ、ＡｌｘＧａ１－ｘＡｓ外延层的微波光电导谱和横向磁阻，给出了从微波光电导谱计算少子扩散长度和从横向磁阻计算霍耳迁移率的方法，并且由此算得外延层的少于扩散长度和霍耳迁移率．本方法对被测样品的几何形状和尺寸无特殊要求，测试区域小于５×５ｍｍ２，具有无损伤、不污染的优点，并配有微机控制，测试迅速方便．

Abstract The microwave photoconductivity spectrum and magnetic resistance of GaAsand Al.Ga1-xAs epitaxial layer have been measured contactlessly by microwave dielectricwaveguide method. A method for calculating the minority carrier diffusion length and Hallmobility of GaAs and Al. Ga1-xAs epitaxial layer is also presented. The measuring area isless than 5×5 mm2 and the shape and size of the testing wafer is not specialized.So,thesample is not polluted and destructed during this test. Using a microcomputer to controlthis apparatus, the measuring process is more fast and convenient.