亚微米GaAs PHEMT器件的结构设计与优化

The Design and Optimization of the Sub-micron GaAs PHEMT Device

主要论述了采用POSES软件对亚微米GaAs PHEMT器件进行的结构设计与优化。在结构设计过程中,本文首先简要分析了PHEMT器件的工作原理;然后利用POSES软件数值求解了材料结构和器件性能之间的关系,并根据上述分析结果优化器件结构设计,完成流片实验。流片得到的0.25μm GaAs PHEMT器件的性能参数为:跨导gm=440mS/mm、截止频率fT=50GHz、最大振荡频率fmax>80GHz,显示出良好的DC和AC小信号特性。

This paper mainly discusses the deaign and optimization of the sub - micron GaAs PHEMT device by using POSES software. During the design of the device, we firstly introduce its operation mechanism and then numerical compute the relationship between the material structure and its performance by using the POSES software. Basing on these analysis resuits, we complete its structural design and fabrication. The characteristic parameter of the 0. 25 μm GaAs PHEMT is gm = 440 ms/mm, fr = 50GHz and fmax 〉 80 GHz. All of these results show that the device has good DC and AC small - signal characteristic.