沸腾回流法制备Al元素掺杂ZnO及表征

Preparation and Characterization of Al-doped ZnO via a Simple Method of Boiling Reflux

采用液相沸腾回流法,制备出不同含量Al元素掺杂的ZnO半导体材料,并对产物进行了XRF,XRD,SEM及其导电性能的表征.实验结果表明:Al元素掺杂后产物ZnO的结构仍然为六方晶系纤锌矿结构;Al元素掺杂量不是无限增大的,当Al元素掺杂量达到24.0 mmol/L时,就会趋于饱和;Al元素掺杂的ZnO的导电性能比纯ZnO有所提高,因此证明了这是一条比较优化的工艺合成路线.

Al-doped ZnO semiconductor materials with different component were prepared via a simple solution route, boiling reflux method. The obtained samples were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and X-ray fluorescence （XRF）. The electrical properties of the products were also studied. Results show that the Al-doped ZnO particles were of hexagonal wurtzite structure. The percent of doped AI in the products was not infinite. It would be statured when the original concentration of AI reached 24.0 mmol/L. Furthermore, the electrical properties of Al-doped ZnO material were improved, compared with pure ZnO.