期刊文献+

宽带双周期性BST电容加载共面波导移相器 被引量:1

CPW wide band phase shifter double periodically loaded with BST capacitors
下载PDF
导出
摘要 提出了一种双周期性BST电容加载共面波导传输线的移相器结构。基于这种结构设计制作的铁电薄膜移相器较好地解决了整个电路的阻抗匹配问题,其反射损耗的波纹在较宽的工作频带内趋于同一幅度.在沉积有钛酸锶钡(BST)薄膜的氧化镁基片上设计并制作了一个宽带双周期性BST又指电容力口载共面波导移相器,测试结果显示该移相器的反射损耗在0-15GHz内保持在-15dB,其中在14.5GHz处,在30V的外加偏压下其移相能力可达35°。 A coplanar waveguide (CPW) phase shifter was proposed, which was double periodically loaded with BST capacitors. The impedance matching problem was well solved in the phase shifter designed using this unique structure. In the whole operation frequency range, the local return loss maxima of the phase shifter appear at more or less the same level. A CPW wide band phase shifter loaded with interdigitated BST capacitors was designed and fabricated on MgO substrate coated with BST thin film. Measured results show that its return loss is -15 dB at 0-15 GHz, and 14.5 GHz, its differential phase shift is 35° under 30 V applied bias voltage.
出处 《电子元件与材料》 CAS CSCD 北大核心 2007年第3期38-40,共3页 Electronic Components And Materials
基金 河南科技大学人才科学研究基金资助项目(No.06-7)
关键词 电子技术 双周期性结构 BST电容 共面波导传输线 移相器 electron technology double periodic structure BST capacitor CPW phase shifter
  • 相关文献

参考文献11

  • 1Kozyrev A,Osadchy V,Pavlov A,et al.Application of ferroelectrics in phase shifter design[J].IEEE MTT-S Dig,2000,3(6):1355-1358.
  • 2金宇龙,周洪庆,吴洪忠,刘敏,蒋微波,黄志文.钛酸锶钡(BST)铁电移相器材料的研究现状[J].电子元件与材料,2003,22(2):38-40. 被引量:27
  • 3Vankeuls F W,Romanofsky R R,Varaljay N D,et al.A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications[J].Microwave Opt Technol Lett,1999,20(1):53-56.
  • 4Jain M, Majumder S B, Katiyar R S, et al. Improved dielectric properties of heterostructured Ba0.5Sr0.5TiO3 thin film composites for microwave dielectric devices [J]. Mater Res Soc Symp Proc, 2003, 748: 483--488.
  • 5Kim B J,Baik S,Poplavko Y,et al.Epitaxial Ba0.5Sr0.5TiO3 thin films for microwave phase shifters[J].Integr Ferroelectr,2001,34(1-4):1647/207-1654/214.
  • 6Lee S,Moon S E,Ryu H,et al.Microwave properties of compositionally graded (Ba,Sr)TiO3 thin films according to the direction of the composition gradient for tunable microwave applications[J].Appl Phys Lett,2003,82:2133-2135.
  • 7Erker E G,Nagra A S,Liu Y,et al.Monolithic Ka-band phase shifter using voltage tunable BaSrTiO3 parallel plate capacitors[J].IEEE Microwave Guided Wave Lett,2000,10(1):10-12.
  • 8Acikel B,Taylor T R,Hansen P J,et al.A new high performance phase shifter using BaxSr1-xTiO3 thin films[J].IEEE Microwave Compon Lett,2002,12(7):237-239.
  • 9Liu Y,Nagra A S,Erker E G,et al.BaSrTiO3 interdigitated capacitors for distributed phase shifter applications[J].IEEE Microwave Guided Wave Lett,2000,10(11):448-450.
  • 10余慧春,徐爱兰,惠春.BST薄膜铁电移相器研究进展[J].电子元件与材料,2005,24(3):59-62. 被引量:7

二级参考文献14

  • 1Sengupta S, Green S M. Pulsed laser ablation of ferroelectric composites for phased array antenna applications [J]. Appl Surf Sci, 1998, 127-129: 486-490.
  • 2Kim K, Kim C. Structure and dielectric properties of Bi-doped Ba0.6Sr0.4TiO3 thin films fabricated by sol-gel method [J]. Microelectron Eng, 2003, 66: 835-841.
  • 3Adikary S U,Chan H L W. Compositionally graded BaxSr1-xTiO3 thin films for tunable microwave applications [J]. Mater Chem Phys, 2003, 79: 157-160.
  • 4Peng D W, Meng Z Y. Influence of buffer layer on dielectric properties of (Ba1-xSrx)TiO3 thin films [J]. Microelectron Eng, 2003, 66: 631-636.
  • 5Jain M, Majumder S B, Katiyar R S, et al. Dielectric properties of sol-gel-derived MgO: Ba0.5Sr0.5TiO3 thin-film composites [J]. Appl Phys Lett, 2002, 81(17): 3212-3214.
  • 6Moon S E, Kim E, Lee S, et al. Comparison of microwave dielectric properties of between (001) and (011) ferroelectric Ba1-xSrxTiO3 thin films grown by pulsed laser deposition [J]. Mater Res Soc Symp Proc, 2002, 720: 79-84.
  • 7Van Keuls F W, Romanofsky R R, Varaljay N D, et al. A Ku- band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications [J]. Microwave Opt Technol Lett, 1999, 20(1): 53- 56.
  • 8Jain M, Majumder S B, Katiyar R S, et al. Improved dielectric properties of heterostructured Ba0.5Sr0.5TiO3 thin film composites for microwave dielectric devices [J]. Mater Res Soc Symp Proc, 2003, 748: 483-488.
  • 9Kim B J, Baik S, Poplavko Y, et al. Epitaxial Ba0.5Sr0.5TiO3 thin films for microwave phase shifters [J]. Integr Ferroelectr, 2001, 34(1-4): 1647/207-1654/214.
  • 10Lee S, Moon S E, Ryu H, et al. Microwave properties of compositionally graded (Ba, Sr)TiO3 thin films according to the direction of the composition gradient for tunable microwave applications [J]. Appl Phys Lett, 2003, 82: 2133-2135.

共引文献28

同被引文献8

  • 1余慧春,徐爱兰,惠春.BST薄膜铁电移相器研究进展[J].电子元件与材料,2005,24(3):59-62. 被引量:7
  • 2Kozyrev A,Osadchy V,Pavlov A,et al.Application of ferroelectrics in phase shifter design[J].IEEE MTT-S Dig,2000,3(1):1355-1358.
  • 3Kim B J,Baik S,Poplavko Y,et al.Epitaxial Ba0.5Sr0.5TiO3 thin films for microwave phase shifters[J].Integrated Ferroelectr,2001,34(1/2/3/4):1647-1654.
  • 4Lee S,Moon S E,Ryu H,et al.Microwave properties of compositionally graded (Ba,Sr)TiO3 thin films according to the direction of the composition gradient for tunable microwave applications[J].Appl Phys Lett,2003,82:2133-2135.
  • 5Erker E G,Nagra A S,Liu Y,et al.Monolithic Ka-band phase shifter using voltage tunable BaSrTiO3 parallel plate capacitors[J].IEEE Microwave Guided Wave Lett,2000,10(1):10-12.
  • 6Acikel B,Taylor T R,Hansen P J,et al.A new high performance phase shifter using BaxSr1-xTiO3 thin films[J].IEEE Microwave Compon Lett,2002,12(7):237-239.
  • 7Liu Y,Nagra A S,Erker E G,et al.BaSrTiO3 interdigitated capacitors for distributed phase shifter applications[J].IEEE Microwave Guided Wave Lett,2000,10(11):448-450.
  • 8金宇龙,周洪庆,吴洪忠,刘敏,蒋微波,黄志文.钛酸锶钡(BST)铁电移相器材料的研究现状[J].电子元件与材料,2003,22(2):38-40. 被引量:27

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部