InSb纳米晶体的生长和吸收光谱的研究

Preparation and optical absorption spectra of nanocrystal InSb

采用在惰性气体中蒸发的方法获得了沉积在ZnS基片上的InSb纳米晶体,其平均尺寸随惰性气体的压强增加而增大.从实验测量的室温吸收谱上看到,当纳米晶体的平均直径从27.9 nm减小到24.2nm再到21.4 nm时,其吸收边分别向高能方向移动了0.0151 eV和0.0145 eV.用有效质量近似模型计算了半导体纳米晶体的吸收边相对其体材料的移动,将理论计算与实验结果进行了比较.

Semiconductor nanocrystals InSb deposited on the ZnS substrate by using the method of evaporation in inert gas. The average size of InSb nanocrystals grows with increasing pressure of inert gas. From roomtemperature optical absorption, 0.0151 eV and 0.0145 eV high-energy shift of absorption edge of InSb nanoerystals has been measure as the mean diameter decreases from 27.9 nm to 24.2 nm, and then to 21.4 nm. The shift of absorption edge of InSb nanocrystals, compared with that of bulk, is calculated by means of effective-mass approximation model. The calculation and experimental results are compared.